Documente tehnice
Specificatii
End 1 Gender
Female
End 2 Type
DIP
End 2 Gender
Male
End 2 Number of Contacts
8
End 1 Type
QFN
End 1 Number of Contacts
8
Body Orientation
Straight
End 2
8 Pin Male DIP
Pitch
1.27 mm, 2.54 mm
End 1
8 Pin Female QFN
Montare
Through Hole
Marca
WinslowTara de origine
United Kingdom
Detalii produs
Automotive Ignition IGBT, Fairchild Semiconductor
These EcoSPARK IGBT devices are optimised for driving automotive ignition coils. They have been stress tested and meet the AEC-Q101 standard.
Standards
AEC-Q101
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 8,43
Buc. (Intr-un pachet de 5) (fara TVA)
€ 10,032
Buc. (Intr-un pachet de 5) (cu TVA)
5
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Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 120 | € 8,43 | € 42,15 |
125 - 370 | € 7,35 | € 36,75 |
375 - 995 | € 6,50 | € 32,50 |
1000 - 1995 | € 5,69 | € 28,45 |
2000+ | € 5,26 | € 26,30 |
Documente tehnice
Specificatii
End 1 Gender
Female
End 2 Type
DIP
End 2 Gender
Male
End 2 Number of Contacts
8
End 1 Type
QFN
End 1 Number of Contacts
8
Body Orientation
Straight
End 2
8 Pin Male DIP
Pitch
1.27 mm, 2.54 mm
End 1
8 Pin Female QFN
Montare
Through Hole
Marca
WinslowTara de origine
United Kingdom
Detalii produs
Automotive Ignition IGBT, Fairchild Semiconductor
These EcoSPARK IGBT devices are optimised for driving automotive ignition coils. They have been stress tested and meet the AEC-Q101 standard.
Standards
AEC-Q101
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.