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Specificatii
Transistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
700 V
Tip pachet
TO-220AB
Montare
Through Hole
Maximum Power Dissipation
80 W
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Operating Frequency
60 Hz
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
10.3 x 4.5 x 15.8mm
Maximum Collector Emitter Saturation Voltage
2 V
Detalii produs
High Voltage Transistors, WeEn Semiconductors
Bipolar Transistors, WeEn Semiconductors
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P.O.A.
Impachetare pentru productie (Tub)
5
P.O.A.
Impachetare pentru productie (Tub)
5
Documente tehnice
Specificatii
Transistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
700 V
Tip pachet
TO-220AB
Montare
Through Hole
Maximum Power Dissipation
80 W
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Operating Frequency
60 Hz
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
10.3 x 4.5 x 15.8mm
Maximum Collector Emitter Saturation Voltage
2 V
Detalii produs