Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Tip pachet
D2PAK (TO-263)
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
2.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
9.65mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.41mm
Typical Gate Charge @ Vgs
126 nC @ 10 V
Inaltime
4.82mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.5V
Detalii produs
N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
Standard
2
P.O.A.
Standard
2
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Tip pachet
D2PAK (TO-263)
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
2.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
9.65mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.41mm
Typical Gate Charge @ Vgs
126 nC @ 10 V
Inaltime
4.82mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.5V
Detalii produs