Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
30 V
Tip pachet
TSOP
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
53 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.1mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Latime
1.7mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
1mm
Tara de origine
China
Detalii produs
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
Impachetare pentru productie (Rola)
20
P.O.A.
Impachetare pentru productie (Rola)
20
Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
30 V
Tip pachet
TSOP
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
53 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.1mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Latime
1.7mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
1mm
Tara de origine
China
Detalii produs