Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
4.7 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
67.5 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Typical Gate Charge @ Vgs
23.8 nC @ 8 V
Latime
1.4mm
Transistor Material
Si
Temperatura minima de lucru
-50 °C
Inaltime
1.02mm
Tara de origine
China
Detalii produs
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,07
Buc. (Intr-un pachet de 50) (fara TVA)
€ 0,083
Buc. (Intr-un pachet de 50) (cu TVA)
Standard
50
€ 0,07
Buc. (Intr-un pachet de 50) (fara TVA)
€ 0,083
Buc. (Intr-un pachet de 50) (cu TVA)
Standard
50
Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
4.7 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
67.5 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Typical Gate Charge @ Vgs
23.8 nC @ 8 V
Latime
1.4mm
Transistor Material
Si
Temperatura minima de lucru
-50 °C
Inaltime
1.02mm
Tara de origine
China
Detalii produs