Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
600 mA
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-323
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
480 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
280 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
0.86 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.2mm
Transistor Material
Si
Latime
1.35mm
Temperatura minima de lucru
-55 °C
Inaltime
1mm
Detalii produs
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,41
Buc. (Livrat pe rola) (fara TVA)
€ 0,488
Buc. (Livrat pe rola) (cu TVA)
10
€ 0,41
Buc. (Livrat pe rola) (fara TVA)
€ 0,488
Buc. (Livrat pe rola) (cu TVA)
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
10 - 90 | € 0,41 | € 4,10 |
100 - 490 | € 0,30 | € 3,00 |
500 - 990 | € 0,27 | € 2,70 |
1000 - 2490 | € 0,21 | € 2,10 |
2500+ | € 0,18 | € 1,80 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
600 mA
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-323
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
480 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
280 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
0.86 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.2mm
Transistor Material
Si
Latime
1.35mm
Temperatura minima de lucru
-55 °C
Inaltime
1mm
Detalii produs