Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
500 V
Dimensiune celula
D Series
Tip pachet
TO-247AC
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
278 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.31mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
15.87mm
Typical Gate Charge @ Vgs
85 nC @ 10 V
Inaltime
20.82mm
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 3,37
Each (In a Tube of 25) (fara TVA)
€ 4,01
Each (In a Tube of 25) (cu TVA)
25
€ 3,37
Each (In a Tube of 25) (fara TVA)
€ 4,01
Each (In a Tube of 25) (cu TVA)
25
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
25 - 25 | € 3,37 | € 84,25 |
50 - 100 | € 3,06 | € 76,50 |
125+ | € 2,74 | € 68,50 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
500 V
Dimensiune celula
D Series
Tip pachet
TO-247AC
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
278 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.31mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
15.87mm
Typical Gate Charge @ Vgs
85 nC @ 10 V
Inaltime
20.82mm
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs