Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
250 V
Tip pachet
TO-220FP
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Typical Gate Charge @ Vgs
38 nC @ 10 V
Number of Elements per Chip
1
Inaltime
9.8mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 2,05
Each (In a Tube of 50) (fara TVA)
€ 2,44
Each (In a Tube of 50) (cu TVA)
50
€ 2,05
Each (In a Tube of 50) (fara TVA)
€ 2,44
Each (In a Tube of 50) (cu TVA)
50
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
50 - 50 | € 2,05 | € 102,50 |
100 - 200 | € 1,68 | € 84,00 |
250+ | € 1,57 | € 78,50 |
Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
250 V
Tip pachet
TO-220FP
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Typical Gate Charge @ Vgs
38 nC @ 10 V
Number of Elements per Chip
1
Inaltime
9.8mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs