Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
200 V
Tip pachet
TO-220FP
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.83mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
10.63mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Inaltime
16.12mm
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,54
Each (In a Tube of 50) (fara TVA)
€ 0,643
Each (In a Tube of 50) (cu TVA)
50
€ 0,54
Each (In a Tube of 50) (fara TVA)
€ 0,643
Each (In a Tube of 50) (cu TVA)
50
Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
200 V
Tip pachet
TO-220FP
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.83mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
10.63mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Inaltime
16.12mm
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs