Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
100 V
Tip pachet
D2PAK (TO-263)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
1.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
9.65mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Lungime
10.41mm
Typical Gate Charge @ Vgs
8.7 nC @ 10 V
Inaltime
4.83mm
Temperatura minima de lucru
-55 °C
Detalii produs
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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P.O.A.
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P.O.A.
50
Documente tehnice
Specificatii
Marca
VishayChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
100 V
Tip pachet
D2PAK (TO-263)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
1.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
9.65mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Lungime
10.41mm
Typical Gate Charge @ Vgs
8.7 nC @ 10 V
Inaltime
4.83mm
Temperatura minima de lucru
-55 °C
Detalii produs