Documente tehnice
Specificatii
Marca
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
40 (Channnel 1) A, 60 (Channel 2) A
Maximum Drain Source Voltage
30 V
Dimensiune celula
TrenchFET
Tip pachet
PowerPAIR 6 x 5
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
26.6 W, 60 W
Maximum Gate Source Voltage
+16 V, +20 V, -12 V, -16 V
Latime
6mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
5mm
Typical Gate Charge @ Vgs
14.6 (Channel 1) nC @ 10 V, 62 (Channel 2) nC @ 10 V
Inaltime
0.7mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
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P.O.A.
3000
P.O.A.
3000
Documente tehnice
Specificatii
Marca
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
40 (Channnel 1) A, 60 (Channel 2) A
Maximum Drain Source Voltage
30 V
Dimensiune celula
TrenchFET
Tip pachet
PowerPAIR 6 x 5
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
26.6 W, 60 W
Maximum Gate Source Voltage
+16 V, +20 V, -12 V, -16 V
Latime
6mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
5mm
Typical Gate Charge @ Vgs
14.6 (Channel 1) nC @ 10 V, 62 (Channel 2) nC @ 10 V
Inaltime
0.7mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V