Documente tehnice
Specificatii
Marca
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
30 V
Dimensiune celula
TrenchFET
Tip pachet
1212
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.15V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
3.15mm
Number of Elements per Chip
1
Transistor Material
Si
Lungime
3.15mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.07mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
China
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P.O.A.
3000
P.O.A.
3000
Documente tehnice
Specificatii
Marca
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
30 V
Dimensiune celula
TrenchFET
Tip pachet
1212
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.15V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
3.15mm
Number of Elements per Chip
1
Transistor Material
Si
Lungime
3.15mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.07mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
China