Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
8 V
Tip pachet
DSBGA
Timp montare
Surface Mount
Numar pini
9
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
1.5mm
Typical Gate Charge @ Vgs
18.9 nC @ 4 V
Latime
1.5mm
Number of Elements per Chip
1
Forward Diode Voltage
1V
Inaltime
0.35mm
Dimensiune celula
NexFET
Temperatura minima de lucru
-55 °C
Tara de origine
Philippines
Detalii produs
P-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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P.O.A.
250
P.O.A.
250
Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
8 V
Tip pachet
DSBGA
Timp montare
Surface Mount
Numar pini
9
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
1.5mm
Typical Gate Charge @ Vgs
18.9 nC @ 4 V
Latime
1.5mm
Number of Elements per Chip
1
Forward Diode Voltage
1V
Inaltime
0.35mm
Dimensiune celula
NexFET
Temperatura minima de lucru
-55 °C
Tara de origine
Philippines
Detalii produs