Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
145 A
Maximum Drain Source Voltage
40 V
Tip pachet
SON
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
6.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.8mm
Typical Gate Charge @ Vgs
13 nC @ 4.5 V
Latime
5mm
Transistor Material
Si
Dimensiune celula
NexFET
Temperatura minima de lucru
-55 °C
Inaltime
1.1mm
Detalii produs
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
145 A
Maximum Drain Source Voltage
40 V
Tip pachet
SON
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
6.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.8mm
Typical Gate Charge @ Vgs
13 nC @ 4.5 V
Latime
5mm
Transistor Material
Si
Dimensiune celula
NexFET
Temperatura minima de lucru
-55 °C
Inaltime
1.1mm
Detalii produs