Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
2.9 A
Maximum Drain Source Voltage
12 V
Tip pachet
PICOSTAR
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Latime
1.04mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
2 nC @ 0 V
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
0.64mm
Inaltime
0.35mm
Dimensiune celula
FemtoFET
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1V
Tara de origine
Philippines
Detalii produs
N-Channel FemtoFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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P.O.A.
250
P.O.A.
250
Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
2.9 A
Maximum Drain Source Voltage
12 V
Tip pachet
PICOSTAR
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Latime
1.04mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
2 nC @ 0 V
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
0.64mm
Inaltime
0.35mm
Dimensiune celula
FemtoFET
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1V
Tara de origine
Philippines
Detalii produs