Documente tehnice
Specificatii
Marca
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
30 mA
Maximum Drain Source Voltage
600 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
800 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Typical Gate Charge @ Vgs
1.18 nC @ 5 V
Latime
1.6mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Temperatura minima de lucru
-55 °C
Inaltime
1.1mm
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P.O.A.
3000
P.O.A.
3000
Documente tehnice
Specificatii
Marca
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
30 mA
Maximum Drain Source Voltage
600 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
800 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Typical Gate Charge @ Vgs
1.18 nC @ 5 V
Latime
1.6mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Temperatura minima de lucru
-55 °C
Inaltime
1.1mm