Documente tehnice
Specificatii
Marca
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
30 V
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.5mm
Typical Gate Charge @ Vgs
7.5 nC @ 4.5 V
Latime
5.8mm
Forward Diode Voltage
1V
Inaltime
2.3mm
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Documente tehnice
Specificatii
Marca
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
30 V
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.5mm
Typical Gate Charge @ Vgs
7.5 nC @ 4.5 V
Latime
5.8mm
Forward Diode Voltage
1V
Inaltime
2.3mm