Documente tehnice
Specificatii
Marca
Taiwan SemiconductorTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
30 V
Tip pachet
TO-92
Timp montare
Through Hole
Maximum Power Dissipation
500 mW
Minimum DC Current Gain
110
Transistor Configuration
Single
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
6 V
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
5.1 x 4.1 x 4.7mm
Temperatura maxima de lucru
+150 °C
Tara de origine
China
Detalii produs
Small Signal NPN Transistors, Taiwan Semiconductor
Bipolar Transistors, Taiwan Semiconductor
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P.O.A.
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P.O.A.
4000
Documente tehnice
Specificatii
Marca
Taiwan SemiconductorTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
30 V
Tip pachet
TO-92
Timp montare
Through Hole
Maximum Power Dissipation
500 mW
Minimum DC Current Gain
110
Transistor Configuration
Single
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
6 V
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
5.1 x 4.1 x 4.7mm
Temperatura maxima de lucru
+150 °C
Tara de origine
China
Detalii produs