Documente tehnice
Specificatii
Marca
Taiwan SemiconductorTransistor Type
NPN
Maximum DC Collector Current
800 mA
Maximum Collector Emitter Voltage
25 V
Tip pachet
TO-92
Montare
Through Hole
Maximum Power Dissipation
625 mW
Minimum DC Current Gain
250
Transistor Configuration
Single
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
5 V
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
5.1 x 4.1 x 4.7mm
Temperatura maxima de lucru
+150 °C
Tara de origine
Taiwan, Province Of China
Detalii produs
General Purpose NPN Transistors, Taiwan Semiconductor
Bipolar Transistors, Taiwan Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
4000
P.O.A.
4000
Documente tehnice
Specificatii
Marca
Taiwan SemiconductorTransistor Type
NPN
Maximum DC Collector Current
800 mA
Maximum Collector Emitter Voltage
25 V
Tip pachet
TO-92
Montare
Through Hole
Maximum Power Dissipation
625 mW
Minimum DC Current Gain
250
Transistor Configuration
Single
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
5 V
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
5.1 x 4.1 x 4.7mm
Temperatura maxima de lucru
+150 °C
Tara de origine
Taiwan, Province Of China
Detalii produs