Documente tehnice
Specificatii
Marca
STMicroelectronicsMaximum Continuous Collector Current
10 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
83 W
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Channel Type
N
Numar pini
3
Transistor Configuration
Single
Dimensiuni
6.6 x 6.2 x 2.4mm
Temperatura minima de lucru
-55 °C
Gate Capacitance
855pF
Temperatura maxima de lucru
+175 °C
Energy Rating
221mJ
Tara de origine
China
Detalii produs
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,94
Buc. (Livrat pe rola) (fara TVA)
€ 1,119
Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
10
€ 0,94
Buc. (Livrat pe rola) (fara TVA)
€ 1,119
Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
10 - 40 | € 0,94 | € 9,40 |
50 - 90 | € 0,86 | € 8,60 |
100 - 240 | € 0,77 | € 7,70 |
250 - 490 | € 0,68 | € 6,80 |
500+ | € 0,64 | € 6,40 |
Documente tehnice
Specificatii
Marca
STMicroelectronicsMaximum Continuous Collector Current
10 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
83 W
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Channel Type
N
Numar pini
3
Transistor Configuration
Single
Dimensiuni
6.6 x 6.2 x 2.4mm
Temperatura minima de lucru
-55 °C
Gate Capacitance
855pF
Temperatura maxima de lucru
+175 °C
Energy Rating
221mJ
Tara de origine
China
Detalii produs
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.