Documente tehnice
Specificatii
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Transistor Material
Si
Transistor Configuration
Common Source
Numar pini
5
Maximum Gate Source Voltage
-20 V, +20 V
Timp montare
Screw Mount
Temperatura maxima de lucru
+200 °C
Maximum Drain Source Voltage
70 V
Maximum Gate Threshold Voltage
7V
Dimensiune celula
TetraFET
Latime
6.47mm
Inaltime
4.82mm
Maximum Continuous Drain Current
10 A
Maximum Power Dissipation
175 W
Lungime
24.76mm
Tip pachet
DK
Marca
SemelabTara de origine
United Kingdom
Detalii produs
Fully Moulded Subminiature GB Series
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 212,66
Buc. (fara TVA)
€ 253,07
Buc. (cu TVA)
Standard
1
€ 212,66
Buc. (fara TVA)
€ 253,07
Buc. (cu TVA)
Standard
1
Cumpara in pachete mari
Cantitate | Pret unitar |
---|---|
1 - 4 | € 212,66 |
5 - 9 | € 184,30 |
10 - 24 | € 174,43 |
25+ | € 166,70 |
Documente tehnice
Specificatii
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Transistor Material
Si
Transistor Configuration
Common Source
Numar pini
5
Maximum Gate Source Voltage
-20 V, +20 V
Timp montare
Screw Mount
Temperatura maxima de lucru
+200 °C
Maximum Drain Source Voltage
70 V
Maximum Gate Threshold Voltage
7V
Dimensiune celula
TetraFET
Latime
6.47mm
Inaltime
4.82mm
Maximum Continuous Drain Current
10 A
Maximum Power Dissipation
175 W
Lungime
24.76mm
Tip pachet
DK
Marca
SemelabTara de origine
United Kingdom
Detalii produs