Documente tehnice
Specificatii
Marca
ROHMChannel Type
P
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
12 V
Tip pachet
TSMT-8
Dimensiune celula
RQ1A070AP
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
0 to -8 V
Temperatura maxima de lucru
+150 °C
Lungime
3.1mm
Typical Gate Charge @ Vgs
80 nC @ 4.5 V
Latime
2.5mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Inaltime
0.8mm
Tara de origine
Japan
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Buc. (Intr-un pachet de 20) (fara TVA)
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Buc. (Intr-un pachet de 20) (cu TVA)
20
Documente tehnice
Specificatii
Marca
ROHMChannel Type
P
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
12 V
Tip pachet
TSMT-8
Dimensiune celula
RQ1A070AP
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
0 to -8 V
Temperatura maxima de lucru
+150 °C
Lungime
3.1mm
Typical Gate Charge @ Vgs
80 nC @ 4.5 V
Latime
2.5mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Inaltime
0.8mm
Tara de origine
Japan