Documente tehnice
Specificatii
Channel Type
N
Numar pini
3
Maximum Gate Emitter Voltage
±30V
Transistor Configuration
Single
Timp montare
Through Hole
Gate Capacitance
1910pF
Temperatura maxima de lucru
+150 °C
Maximum Continuous Collector Current
60 A
Maximum Collector Emitter Voltage
600 V
Dimensiuni
15.94 x 5.02 x 21.13mm
Tip pachet
TO-247A
Maximum Power Dissipation
208.3 W
Marca
Renesas ElectronicsTara de origine
China
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Documente tehnice
Specificatii
Channel Type
N
Numar pini
3
Maximum Gate Emitter Voltage
±30V
Transistor Configuration
Single
Timp montare
Through Hole
Gate Capacitance
1910pF
Temperatura maxima de lucru
+150 °C
Maximum Continuous Collector Current
60 A
Maximum Collector Emitter Voltage
600 V
Dimensiuni
15.94 x 5.02 x 21.13mm
Tip pachet
TO-247A
Maximum Power Dissipation
208.3 W
Marca
Renesas ElectronicsTara de origine
China