Documente tehnice
Specificatii
Marca
PanasonicChannel Type
N
Idss Drain-Source Cut-off Current
5 to 12mA
Maximum Drain Gate Voltage
-55V
Transistor Configuration
Single
Configuration
Single
Montare
Surface Mount
Tip pachet
SMini3 F2 B
Numar pini
3
Dimensiuni
2 x 1.25 x 0.8mm
Temperatura maxima de lucru
+150 °C
Lungime
2mm
Inaltime
0.8mm
Latime
1.25mm
Tara de origine
China
Detalii produs
N-channel JFET, Panasonic
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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Documente tehnice
Specificatii
Marca
PanasonicChannel Type
N
Idss Drain-Source Cut-off Current
5 to 12mA
Maximum Drain Gate Voltage
-55V
Transistor Configuration
Single
Configuration
Single
Montare
Surface Mount
Tip pachet
SMini3 F2 B
Numar pini
3
Dimensiuni
2 x 1.25 x 0.8mm
Temperatura maxima de lucru
+150 °C
Lungime
2mm
Inaltime
0.8mm
Latime
1.25mm
Tara de origine
China
Detalii produs
N-channel JFET, Panasonic
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.