Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
1.2 to 3mA
Maximum Drain Source Voltage
30 V
Maximum Drain Gate Voltage
-30V
Transistor Configuration
Single
Configuration
Single
Montare
Surface Mount
Tip pachet
SOT-883
Numar pini
3
Drain Gate On-Capacitance
4pF
Source Gate On-Capacitance
4pF
Dimensiuni
1.08 x 0.68 x 0.41mm
Inaltime
0.41mm
Latime
0.68mm
Maximum Power Dissipation
100 mW
Temperatura maxima de lucru
+150 °C
Lungime
1.08mm
Tara de origine
Malaysia
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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Buc. (Pe o rola de 8000) (fara TVA)
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Buc. (Pe o rola de 8000) (cu TVA)
8000
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
1.2 to 3mA
Maximum Drain Source Voltage
30 V
Maximum Drain Gate Voltage
-30V
Transistor Configuration
Single
Configuration
Single
Montare
Surface Mount
Tip pachet
SOT-883
Numar pini
3
Drain Gate On-Capacitance
4pF
Source Gate On-Capacitance
4pF
Dimensiuni
1.08 x 0.68 x 0.41mm
Inaltime
0.41mm
Latime
0.68mm
Maximum Power Dissipation
100 mW
Temperatura maxima de lucru
+150 °C
Lungime
1.08mm
Tara de origine
Malaysia
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.