Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
730 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Typical Gate Charge @ Vgs
1.9 nC @ 4.5 V, 3.6 nC @ 10 V
Latime
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
1.01mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,32
Buc. (Intr-un pachet de 25) (fara TVA)
€ 0,381
Buc. (Intr-un pachet de 25) (cu TVA)
Standard
25
€ 0,32
Buc. (Intr-un pachet de 25) (fara TVA)
€ 0,381
Buc. (Intr-un pachet de 25) (cu TVA)
Standard
25
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
25 - 100 | € 0,32 | € 8,00 |
125 - 475 | € 0,14 | € 3,50 |
500 - 1225 | € 0,13 | € 3,25 |
1250+ | € 0,11 | € 2,75 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
730 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Typical Gate Charge @ Vgs
1.9 nC @ 4.5 V, 3.6 nC @ 10 V
Latime
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
1.01mm
Temperatura minima de lucru
-55 °C
Detalii produs