Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
650 V
Tip pachet
TO-247
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
313 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Latime
4.82mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
15.87mm
Typical Gate Charge @ Vgs
81 nC @ 10 V
Inaltime
20.82mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.3V
Informatii indisponibile despre stoc
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€ 6,91
Each (In a Tube of 450) (fara TVA)
€ 8,223
Each (In a Tube of 450) (cu TVA)
450
€ 6,91
Each (In a Tube of 450) (fara TVA)
€ 8,223
Each (In a Tube of 450) (cu TVA)
450
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
650 V
Tip pachet
TO-247
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
313 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Latime
4.82mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
15.87mm
Typical Gate Charge @ Vgs
81 nC @ 10 V
Inaltime
20.82mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.3V