Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
300 mA
Maximum Collector Emitter Voltage
30 V
Maximum Emitter Base Voltage
10 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
5000
Maximum Base Emitter Saturation Voltage
1.5 V
Maximum Collector Base Voltage
30 V
Maximum Collector Emitter Saturation Voltage
1.5 V
Maximum Collector Cut-off Current
100nA
Lungime
3.04mm
Inaltime
1.01mm
Latime
1.4mm
Maximum Power Dissipation
300 mW
Frecventa minima de auto-rezonanta
-55 °C
Dimensiuni
3.04 x 1.4 x 1.01mm
Temperatura maxima de lucru
+150 °C
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Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
300 mA
Maximum Collector Emitter Voltage
30 V
Maximum Emitter Base Voltage
10 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
5000
Maximum Base Emitter Saturation Voltage
1.5 V
Maximum Collector Base Voltage
30 V
Maximum Collector Emitter Saturation Voltage
1.5 V
Maximum Collector Cut-off Current
100nA
Lungime
3.04mm
Inaltime
1.01mm
Latime
1.4mm
Maximum Power Dissipation
300 mW
Frecventa minima de auto-rezonanta
-55 °C
Dimensiuni
3.04 x 1.4 x 1.01mm
Temperatura maxima de lucru
+150 °C