Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
600 mA
Maximum Collector Emitter Voltage
140 V
Tip pachet
SOT-23
Montare
Surface Mount
Maximum Power Dissipation
225 mW
Minimum DC Current Gain
60
Transistor Configuration
Single
Maximum Collector Base Voltage
160 V dc
Maximum Emitter Base Voltage
6 V
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
3.04 x 1.4 x 1.01mm
Detalii produs
General Purpose NPN Transistors, up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
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P.O.A.
Standard
100
P.O.A.
Standard
100
Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
600 mA
Maximum Collector Emitter Voltage
140 V
Tip pachet
SOT-23
Montare
Surface Mount
Maximum Power Dissipation
225 mW
Minimum DC Current Gain
60
Transistor Configuration
Single
Maximum Collector Base Voltage
160 V dc
Maximum Emitter Base Voltage
6 V
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
3.04 x 1.4 x 1.01mm
Detalii produs
General Purpose NPN Transistors, up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.