Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
24 to 60mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
+25 V
Transistor Configuration
Single
Configuration
Single
Montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Dimensiuni
2.9 x 1.3 x 0.94mm
Inaltime
0.94mm
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Latime
1.3mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,39
Buc. (Livrat pe rola) (fara TVA)
€ 0,464
Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
5
€ 0,39
Buc. (Livrat pe rola) (fara TVA)
€ 0,464
Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
5 - 120 | € 0,39 | € 1,95 |
125 - 245 | € 0,36 | € 1,80 |
250 - 495 | € 0,34 | € 1,70 |
500 - 1245 | € 0,31 | € 1,55 |
1250+ | € 0,30 | € 1,50 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
24 to 60mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
+25 V
Transistor Configuration
Single
Configuration
Single
Montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Dimensiuni
2.9 x 1.3 x 0.94mm
Inaltime
0.94mm
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Latime
1.3mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.