Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
0.3 to 1.5mA
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Configuration
Single
Transistor Configuration
Single
Montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Dimensiuni
2.92 x 1.3 x 0.93mm
Temperatura maxima de lucru
+150 °C
Lungime
2.92mm
Inaltime
0.93mm
Latime
1.3mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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Incercati din nou mai tarziu
€ 0,25
Buc. (Livrat pe rola) (fara TVA)
€ 0,298
Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
100
€ 0,25
Buc. (Livrat pe rola) (fara TVA)
€ 0,298
Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
100
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
100 - 225 | € 0,25 | € 6,25 |
250 - 475 | € 0,22 | € 5,50 |
500 - 975 | € 0,19 | € 4,75 |
1000+ | € 0,17 | € 4,25 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
0.3 to 1.5mA
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Configuration
Single
Transistor Configuration
Single
Montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Dimensiuni
2.92 x 1.3 x 0.93mm
Temperatura maxima de lucru
+150 °C
Lungime
2.92mm
Inaltime
0.93mm
Latime
1.3mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.