Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Idss Drain-Source Cut-off Current
1.5 to 20mA
Maximum Drain Gate Voltage
25V dc
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
300 Ω
Montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Source Gate On-Capacitance
11pF
Dimensiuni
3.04 x 1.4 x 1.01mm
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Inaltime
1.01mm
Latime
1.4mm
Detalii produs
P-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,12
Buc. (Livrat pe rola) (fara TVA)
€ 0,143
Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
100
€ 0,12
Buc. (Livrat pe rola) (fara TVA)
€ 0,143
Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
100
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
100 - 240 | € 0,12 | € 1,20 |
250 - 490 | € 0,11 | € 1,10 |
500 - 990 | € 0,11 | € 1,10 |
1000+ | € 0,09 | € 0,90 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Idss Drain-Source Cut-off Current
1.5 to 20mA
Maximum Drain Gate Voltage
25V dc
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
300 Ω
Montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Source Gate On-Capacitance
11pF
Dimensiuni
3.04 x 1.4 x 1.01mm
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Inaltime
1.01mm
Latime
1.4mm
Detalii produs
P-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.