Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 5mA
Maximum Gate Source Voltage
-35 V
Maximum Drain Gate Voltage
35V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
50 Ω
Montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Drain Gate On-Capacitance
28pF
Source Gate On-Capacitance
28pF
Dimensiuni
2.92 x 1.3 x 0.93mm
Frecventa minima de auto-rezonanta
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
2.92mm
Inaltime
0.93mm
Latime
1.3mm
Tara de origine
China
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,26
Buc. (Intr-un pachet de 25) (fara TVA)
€ 0,309
Buc. (Intr-un pachet de 25) (cu TVA)
Standard
25
€ 0,26
Buc. (Intr-un pachet de 25) (fara TVA)
€ 0,309
Buc. (Intr-un pachet de 25) (cu TVA)
Standard
25
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
25 - 75 | € 0,26 | € 6,50 |
100 - 225 | € 0,22 | € 5,50 |
250 - 475 | € 0,18 | € 4,50 |
500 - 975 | € 0,16 | € 4,00 |
1000+ | € 0,14 | € 3,50 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 5mA
Maximum Gate Source Voltage
-35 V
Maximum Drain Gate Voltage
35V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
50 Ω
Montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Drain Gate On-Capacitance
28pF
Source Gate On-Capacitance
28pF
Dimensiuni
2.92 x 1.3 x 0.93mm
Frecventa minima de auto-rezonanta
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
2.92mm
Inaltime
0.93mm
Latime
1.3mm
Tara de origine
China
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.