Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 40mA
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
12 Ω
Timp montare
Through Hole
Tip pachet
TO-92
Numar pini
3
Drain Gate On-Capacitance
85pF
Source Gate On-Capacitance
85pF
Dimensiuni
4.58 x 3.86 x 4.58mm
Inaltime
4.58mm
Latime
3.86mm
Frecventa minima de auto-rezonanta
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
4.58mm
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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Incercati din nou mai tarziu
€ 0,20
Buc. (Intr-o punga de 1000) (fara TVA)
€ 0,238
Buc. (Intr-o punga de 1000) (cu TVA)
1000
€ 0,20
Buc. (Intr-o punga de 1000) (fara TVA)
€ 0,238
Buc. (Intr-o punga de 1000) (cu TVA)
1000
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 40mA
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
12 Ω
Timp montare
Through Hole
Tip pachet
TO-92
Numar pini
3
Drain Gate On-Capacitance
85pF
Source Gate On-Capacitance
85pF
Dimensiuni
4.58 x 3.86 x 4.58mm
Inaltime
4.58mm
Latime
3.86mm
Frecventa minima de auto-rezonanta
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
4.58mm
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.