Documente tehnice
Specificatii
Marca
onsemiMaximum Continuous Collector Current
120 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
600 W
Tip pachet
TO-3PN
Montare
Through Hole
Channel Type
N
Numar pini
3
Transistor Configuration
Single
Dimensiuni
15.8 x 5 x 20.1mm
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+175 °C
Detalii produs
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 5,95
Each (Supplied in a Tube) (fara TVA)
€ 7,08
Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
1
€ 5,95
Each (Supplied in a Tube) (fara TVA)
€ 7,08
Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
1
Cumpara in pachete mari
Cantitate | Pret unitar |
---|---|
1 - 9 | € 5,95 |
10 - 99 | € 4,54 |
100 - 249 | € 3,94 |
250 - 499 | € 3,83 |
500+ | € 3,37 |
Documente tehnice
Specificatii
Marca
onsemiMaximum Continuous Collector Current
120 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
600 W
Tip pachet
TO-3PN
Montare
Through Hole
Channel Type
N
Numar pini
3
Transistor Configuration
Single
Dimensiuni
15.8 x 5 x 20.1mm
Temperatura minima de lucru
-55 °C
Temperatura maxima de lucru
+175 °C
Detalii produs
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.