Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
40 V
Tip pachet
PQFN8
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
13.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±16 V
Latime
5.9mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
5.1mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Inaltime
1.1mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.25V
Tara de origine
Philippines
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
3000
P.O.A.
3000
Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
40 V
Tip pachet
PQFN8
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
13.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±16 V
Latime
5.9mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
5.1mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Inaltime
1.1mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.25V
Tara de origine
Philippines