Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
76 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
4.67mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.36mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Inaltime
15.21mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.3V
Tara de origine
China
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,70
Each (In a Tube of 800) (fara TVA)
€ 2,023
Each (In a Tube of 800) (cu TVA)
800
€ 1,70
Each (In a Tube of 800) (fara TVA)
€ 2,023
Each (In a Tube of 800) (cu TVA)
800
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
800 - 800 | € 1,70 | € 1.360,00 |
1600 - 2400 | € 1,42 | € 1.136,00 |
3200 - 4800 | € 1,36 | € 1.088,00 |
5600+ | € 1,29 | € 1.032,00 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
76 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
4.67mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.36mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Inaltime
15.21mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.3V
Tara de origine
China