Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
51 A
Maximum Drain Source Voltage
80 V
Tip pachet
Power33
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
10 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Latime
3.4mm
Temperatura maxima de lucru
+150 °C
Lungime
3.4mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Inaltime
0.75mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.3V
Tara de origine
Philippines
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P.O.A.
3000
P.O.A.
3000
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
51 A
Maximum Drain Source Voltage
80 V
Tip pachet
Power33
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
10 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Latime
3.4mm
Temperatura maxima de lucru
+150 °C
Lungime
3.4mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Inaltime
0.75mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.3V
Tara de origine
Philippines