Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
4.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
227 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±16 V
Latime
6.22mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
100 nC @ 10 V
Inaltime
2.39mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.3V
Tara de origine
Philippines
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P.O.A.
2500
P.O.A.
2500
Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
4.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
227 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±16 V
Latime
6.22mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
100 nC @ 10 V
Inaltime
2.39mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.3V
Tara de origine
Philippines