Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
650 V
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
181 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Latime
4.7mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.67mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Inaltime
16.3mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
China
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 3,62
Each (In a Tube of 50) (fara TVA)
€ 4,308
Each (In a Tube of 50) (cu TVA)
50
€ 3,62
Each (In a Tube of 50) (fara TVA)
€ 4,308
Each (In a Tube of 50) (cu TVA)
50
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
50 - 50 | € 3,62 | € 181,00 |
100 - 200 | € 2,84 | € 142,00 |
250 - 450 | € 2,65 | € 132,50 |
500 - 950 | € 2,49 | € 124,50 |
1000+ | € 2,17 | € 108,50 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
650 V
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
181 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Latime
4.7mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.67mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Inaltime
16.3mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
China