Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
100 V
Tip pachet
CPH
Timp montare
Surface Mount
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
120 MHz
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
2.9 x 1.6 x 0.9mm
Temperatura maxima de lucru
+150 °C
Tara de origine
China
Detalii produs
General Purpose NPN Transistors, up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
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P.O.A.
3000
P.O.A.
3000
Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
100 V
Tip pachet
CPH
Timp montare
Surface Mount
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
120 MHz
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
2.9 x 1.6 x 0.9mm
Temperatura maxima de lucru
+150 °C
Tara de origine
China
Detalii produs
General Purpose NPN Transistors, up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.