Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
17 A
Maximum Collector Emitter Voltage
250 V
Tip pachet
TO-264
Timp montare
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
80
Transistor Configuration
Single
Maximum Collector Base Voltage
250 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
30 MHz
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
20 x 5 x 26mm
Detalii produs
Power NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
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€ 5,05
Buc. (Intr-un pachet de 5) (fara TVA)
€ 6,01
Buc. (Intr-un pachet de 5) (cu TVA)
5
€ 5,05
Buc. (Intr-un pachet de 5) (fara TVA)
€ 6,01
Buc. (Intr-un pachet de 5) (cu TVA)
5
Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
17 A
Maximum Collector Emitter Voltage
250 V
Tip pachet
TO-264
Timp montare
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
80
Transistor Configuration
Single
Maximum Collector Base Voltage
250 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
30 MHz
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
20 x 5 x 26mm
Detalii produs
Power NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.