Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
650 V
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3 + Tab
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
313 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Temperatura maxima de lucru
+150 °C
Lungime
10.67mm
Typical Gate Charge @ Vgs
81 nC @ 10 V
Number of Elements per Chip
1
Latime
4.7mm
Forward Diode Voltage
1.3V
Inaltime
16.3mm
Frecventa minima de auto-rezonanta
-55 °C
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P.O.A.
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P.O.A.
800
Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
650 V
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3 + Tab
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
313 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Temperatura maxima de lucru
+150 °C
Lungime
10.67mm
Typical Gate Charge @ Vgs
81 nC @ 10 V
Number of Elements per Chip
1
Latime
4.7mm
Forward Diode Voltage
1.3V
Inaltime
16.3mm
Frecventa minima de auto-rezonanta
-55 °C