Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
78 A
Maximum Drain Source Voltage
100 V
Tip pachet
PQFN
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
7.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
5.85mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
26 @ 10 V nC
Inaltime
1.05mm
Dimensiune celula
PowerTrench
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.3V
Detalii produs
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
3000
P.O.A.
3000
Documente tehnice
Specificatii
Marca
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
78 A
Maximum Drain Source Voltage
100 V
Tip pachet
PQFN
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
7.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
5.85mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
26 @ 10 V nC
Inaltime
1.05mm
Dimensiune celula
PowerTrench
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.3V
Detalii produs