Documente tehnice
Specificatii
Marca
ON SemiconductorTransistor Type
PNP
Maximum Continuous Collector Current
-1 A
Maximum Collector Emitter Voltage
30 V
Maximum Emitter Base Voltage
-10 V
Tip pachet
TO-92
Montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
30000
Maximum Collector Base Voltage
-40 V
Maximum Collector Emitter Saturation Voltage
-1 V
Maximum Collector Cut-off Current
-100nA
Temperatura maxima de lucru
+150 °C
Lungime
5.2mm
Inaltime
5.33mm
Latime
4.19mm
Dimensiuni
5.2 x 4.19 x 5.33mm
Maximum Power Dissipation
625 mW
Temperatura minima de lucru
-55 °C
Detalii produs
Darlington PNP Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
100
P.O.A.
100
Documente tehnice
Specificatii
Marca
ON SemiconductorTransistor Type
PNP
Maximum Continuous Collector Current
-1 A
Maximum Collector Emitter Voltage
30 V
Maximum Emitter Base Voltage
-10 V
Tip pachet
TO-92
Montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
30000
Maximum Collector Base Voltage
-40 V
Maximum Collector Emitter Saturation Voltage
-1 V
Maximum Collector Cut-off Current
-100nA
Temperatura maxima de lucru
+150 °C
Lungime
5.2mm
Inaltime
5.33mm
Latime
4.19mm
Dimensiuni
5.2 x 4.19 x 5.33mm
Maximum Power Dissipation
625 mW
Temperatura minima de lucru
-55 °C
Detalii produs
Darlington PNP Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.