Documente tehnice
Specificatii
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
Si
Channel Type
P
Numar pini
3
Transistor Configuration
Single
Timp montare
Surface Mount
Maximum Gate Source Voltage
-10 V, +10 V
Maximum Gate Threshold Voltage
1.4V
Maximum Drain Source Voltage
30 V
Temperatura maxima de lucru
+150 °C
Latime
1.5mm
Inaltime
1.1mm
Lungime
2.9mm
Typical Gate Charge @ Vgs
1.43 nC @ 10 V
Maximum Power Dissipation
250 mW
Maximum Continuous Drain Current
100 mA
Tip pachet
CP
Maximum Drain Source Resistance
54 Ω
Marca
ON SemiconductorTara de origine
China
Detalii produs
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P.O.A.
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P.O.A.
3000
Documente tehnice
Specificatii
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
Si
Channel Type
P
Numar pini
3
Transistor Configuration
Single
Timp montare
Surface Mount
Maximum Gate Source Voltage
-10 V, +10 V
Maximum Gate Threshold Voltage
1.4V
Maximum Drain Source Voltage
30 V
Temperatura maxima de lucru
+150 °C
Latime
1.5mm
Inaltime
1.1mm
Lungime
2.9mm
Typical Gate Charge @ Vgs
1.43 nC @ 10 V
Maximum Power Dissipation
250 mW
Maximum Continuous Drain Current
100 mA
Tip pachet
CP
Maximum Drain Source Resistance
54 Ω
Marca
ON SemiconductorTara de origine
China
Detalii produs