Documente tehnice
Specificatii
Marca
MagnaChipChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
500 V
Tip pachet
TO-220F
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
38 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.71mm
Typical Gate Charge @ Vgs
15.7 nC @ 10 V
Latime
4.93mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.4V
Inaltime
16.13mm
Tara de origine
Korea, Republic Of
Detalii produs
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.
MOSFET Transistors, MagnaChip
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Documente tehnice
Specificatii
Marca
MagnaChipChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
500 V
Tip pachet
TO-220F
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
38 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.71mm
Typical Gate Charge @ Vgs
15.7 nC @ 10 V
Latime
4.93mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.4V
Inaltime
16.13mm
Tara de origine
Korea, Republic Of
Detalii produs
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.