Documente tehnice
Specificatii
Marca
IXYSChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
850 V
Serie
HiperFET
Tip pachet
PLUS264
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
1.79 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Latime
5.31mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
20.29mm
Typical Gate Charge @ Vgs
340 @ 10 V nC
Inaltime
26.59mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.4V
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Documente tehnice
Specificatii
Marca
IXYSChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
850 V
Serie
HiperFET
Tip pachet
PLUS264
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
1.79 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Latime
5.31mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
20.29mm
Typical Gate Charge @ Vgs
340 @ 10 V nC
Inaltime
26.59mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.4V