Documente tehnice
Specificatii
Marca
IXYSMaximum Continuous Collector Current
38 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
165 W
Tip pachet
TO-220
Montare
Through Hole
Channel Type
N
Numar pini
3
Transistor Configuration
Single
Dimensiuni
10.66 x 4.82 x 16mm
Temperatura maxima de lucru
+125 °C
Temperatura minima de lucru
-40 °C
Tara de origine
United States
Detalii produs
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 5,13
Each (In a Tube of 50) (fara TVA)
€ 6,105
Each (In a Tube of 50) (cu TVA)
50
€ 5,13
Each (In a Tube of 50) (fara TVA)
€ 6,105
Each (In a Tube of 50) (cu TVA)
50
Documente tehnice
Specificatii
Marca
IXYSMaximum Continuous Collector Current
38 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
165 W
Tip pachet
TO-220
Montare
Through Hole
Channel Type
N
Numar pini
3
Transistor Configuration
Single
Dimensiuni
10.66 x 4.82 x 16mm
Temperatura maxima de lucru
+125 °C
Temperatura minima de lucru
-40 °C
Tara de origine
United States
Detalii produs
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.