Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
30 V
Tip pachet
SO-8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
18.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.25V
Minimum Gate Threshold Voltage
1.35V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
7.2 nC @ 4.5 V
Latime
4mm
Number of Elements per Chip
1
Forward Diode Voltage
1V
Temperatura minima de lucru
-55 °C
Inaltime
1.5mm
Dimensiune celula
IRF7807ZPbF
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P.O.A.
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P.O.A.
4000
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
30 V
Tip pachet
SO-8
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
18.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.25V
Minimum Gate Threshold Voltage
1.35V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Typical Gate Charge @ Vgs
7.2 nC @ 4.5 V
Latime
4mm
Number of Elements per Chip
1
Forward Diode Voltage
1V
Temperatura minima de lucru
-55 °C
Inaltime
1.5mm
Dimensiune celula
IRF7807ZPbF